Scanning microscopic four-point conductivity probes

Research output: Contribution to journal › Journal article › Research › peer-review

Standard

Scanning microscopic four-point conductivity probes. / Petersen, C. L.; Hansen, T. M.; Bøggild, P.; Boisen, A.; Hansen, O.; Hassenkam, T.; Grey, F.

In: Sensors and Actuators, A: Physical, Vol. 96, No. 1, 2002, p. 53-58.

Research output: Contribution to journal › Journal article › Research › peer-review

Harvard

Petersen, CL, Hansen, TM, Bøggild, P, Boisen, A, Hansen, O, Hassenkam, T & Grey, F 2002, 'Scanning microscopic four-point conductivity probes', Sensors and Actuators, A: Physical, vol. 96, no. 1, pp. 53-58. https://doi.org/10.1016/S0924-4247(01)00765-8

APA

Petersen, C. L., Hansen, T. M., Bøggild, P., Boisen, A., Hansen, O., Hassenkam, T., & Grey, F. (2002). Scanning microscopic four-point conductivity probes. Sensors and Actuators, A: Physical, 96(1), 53-58. https://doi.org/10.1016/S0924-4247(01)00765-8

Vancouver

Petersen CL, Hansen TM, Bøggild P, Boisen A, Hansen O, Hassenkam T et al. Scanning microscopic four-point conductivity probes. Sensors and Actuators, A: Physical. 2002;96(1):53-58. https://doi.org/10.1016/S0924-4247(01)00765-8

Author

Petersen, C. L. ; Hansen, T. M. ; Bøggild, P. ; Boisen, A. ; Hansen, O. ; Hassenkam, T. ; Grey, F. / Scanning microscopic four-point conductivity probes. In: Sensors and Actuators, A: Physical. 2002 ; Vol. 96, No. 1. pp. 53-58.

Bibtex

@article{11a8f85452df42fca1f11c92e7c7da72,
title = "Scanning microscopic four-point conductivity probes",
abstract = "A method for fabricating microscopic four-point probes is presented. The method uses silicon-based microfabrication technology involving only two patterning steps. The last step in the fabrication process is an unmasked deposition of the conducting probe material, and it is thus possible to select the conducting material either for a silicon wafer or a single probe unit. Using shadow masking photolithography an electrode spacing (pitch) down to 1.1 μm was obtained, with cantilever separation down to 200 nm. Characterisation measurements have shown the microscopic probes to be mechanically very flexible and robust. Repeated conductivity measurements on polythiophene films in the same surface area are reproduced within an accuracy of 3%. Automated nanoresolution position control allows scanning across millimetre sized areas, in order to create high spatial resolution maps of the in-plane conductivity.",
keywords = "Conductivity mapping, Four-point conductivity, Microcantilever, Microprobe, Resistivity measurements",
author = "Petersen, {C. L.} and Hansen, {T. M.} and P. B{\o}ggild and A. Boisen and O. Hansen and T. Hassenkam and F. Grey",
year = "2002",
doi = "10.1016/S0924-4247(01)00765-8",
language = "English",
volume = "96",
pages = "53--58",
journal = "Sensors and Actuators A: Physical",
issn = "0924-4247",
publisher = "Elsevier",
number = "1",

}

RIS

TY - JOUR

T1 - Scanning microscopic four-point conductivity probes

AU - Petersen, C. L.

AU - Hansen, T. M.

AU - Bøggild, P.

AU - Boisen, A.

AU - Hansen, O.

AU - Hassenkam, T.

AU - Grey, F.

PY - 2002

Y1 - 2002

N2 - A method for fabricating microscopic four-point probes is presented. The method uses silicon-based microfabrication technology involving only two patterning steps. The last step in the fabrication process is an unmasked deposition of the conducting probe material, and it is thus possible to select the conducting material either for a silicon wafer or a single probe unit. Using shadow masking photolithography an electrode spacing (pitch) down to 1.1 μm was obtained, with cantilever separation down to 200 nm. Characterisation measurements have shown the microscopic probes to be mechanically very flexible and robust. Repeated conductivity measurements on polythiophene films in the same surface area are reproduced within an accuracy of 3%. Automated nanoresolution position control allows scanning across millimetre sized areas, in order to create high spatial resolution maps of the in-plane conductivity.

AB - A method for fabricating microscopic four-point probes is presented. The method uses silicon-based microfabrication technology involving only two patterning steps. The last step in the fabrication process is an unmasked deposition of the conducting probe material, and it is thus possible to select the conducting material either for a silicon wafer or a single probe unit. Using shadow masking photolithography an electrode spacing (pitch) down to 1.1 μm was obtained, with cantilever separation down to 200 nm. Characterisation measurements have shown the microscopic probes to be mechanically very flexible and robust. Repeated conductivity measurements on polythiophene films in the same surface area are reproduced within an accuracy of 3%. Automated nanoresolution position control allows scanning across millimetre sized areas, in order to create high spatial resolution maps of the in-plane conductivity.

KW - Conductivity mapping

KW - Four-point conductivity

KW - Microcantilever

KW - Microprobe

KW - Resistivity measurements

U2 - 10.1016/S0924-4247(01)00765-8

DO - 10.1016/S0924-4247(01)00765-8

M3 - Journal article

AN - SCOPUS:0037204020

VL - 96

SP - 53

EP - 58

JO - Sensors and Actuators A: Physical

JF - Sensors and Actuators A: Physical

SN - 0924-4247

IS - 1

ER -

ID: 288850760